生命周期: | Contact Manufacturer | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.59 |
最大集电极电流 (IC): | 1 A | 配置: | Single |
最小直流电流增益 (hFE): | 100 | 最高工作温度: | 150 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.9 W |
子类别: | Other Transistors | 表面贴装: | NO |
标称过渡频率 (fT): | 140 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB647-C | RENESAS |
获取价格 |
SMALL SIGNAL TRANSISTOR | |
2SB647C(TO-92MOD) | CJ |
获取价格 |
Transistor | |
2SB647-C-AP | MCC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, RO | |
2SB647CTZ | RENESAS |
获取价格 |
1000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN | |
2SB647CTZ | HITACHI |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92MOD, | |
2SB647CTZ-E | RENESAS |
获取价格 |
Silicon PNP Epitaxial | |
2SB647D | CJ |
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Transistor | |
2SB647-D | RENESAS |
获取价格 |
SMALL SIGNAL TRANSISTOR | |
2SB647D(TO-92L) | CJ |
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Transistor | |
2SB647DTZ-E | RENESAS |
获取价格 |
Silicon PNP Epitaxial |