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2SB647A-C PDF预览

2SB647A-C

更新时间: 2024-01-11 20:52:15
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
8页 49K
描述
SMALL SIGNAL TRANSISTOR

2SB647A-C 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-PBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.41最大集电极电流 (IC):1 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):60JESD-30 代码:O-PBCY-W3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2SB647A-C 数据手册

 浏览型号2SB647A-C的Datasheet PDF文件第2页浏览型号2SB647A-C的Datasheet PDF文件第3页浏览型号2SB647A-C的Datasheet PDF文件第4页浏览型号2SB647A-C的Datasheet PDF文件第5页浏览型号2SB647A-C的Datasheet PDF文件第6页浏览型号2SB647A-C的Datasheet PDF文件第7页 
To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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