Datasheet > 2SB1416P

2SB1416P

更新时间： 2024-11-21 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
3页	64K
描述
TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-221VAR

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中文翻译

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数据手册

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2SB1416P 数据手册

Power Transistors

2SB1416

Silicon PNP epitaxial planar type

Unit: mm

7.5±±.ꢀ

4.5±±.ꢀ

For low-frequency power amplification

Complementary to 2SD2136

±.65±±.1

±.85±±.1

1.±±±.1

I Features

±.8 C

•

High forward current transfer ratio h_FEwhich has satisfactory

linearity

±.7±±.1

•

Low collector to emitter saturation voltage V_CE(sat)

Allowing automatic insertion with radial taping

1.15±±.ꢀ

±.5±±.1

±.4±±.1

I Absolute Maximum Ratings T_C= 25°C

±.8 C

ꢀ

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

−60

1 : Emitter

2 : Collector

3 : Base

ꢀ.5±±.ꢀ

−60

−5

MT-3 (MT3 Type Package)

−5

−3

I_C

Collector power dissipation

Junction temperature

Storage temperature

P_C

1.5

°C

T_j

150

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

I_CES

Conditions

Min

Typ

Max

−200

−300

−1

Unit

µA

Collector cutoff current

V_CE= −60 V, V_BE= 0

V_CE= −30 V, I_B= 0

V_EB= −5 V, I_C= 0

I_CEO

Emitter cutoff current

I_EBO

Collector to emitter voltage

Forward current transfer ratio

V_CEO

I_C= −30 mA, I_B= 0

V_CE= −4 V, I_C= −1 A

V_CE= −4 V, I_C= −3 A

I_C= −3 A, I_B= − 0.375 A

V_CE= −4 V, I_C= −3 A

−60

h_FE1

250

h_FE2

V_CE(sat)

V_BE(sat)

f_T

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

−1.8

−1.2

270

V_CB= −5 V, I_E= 0.1 A, f = 200 MHz

I_C= −1 A, I_B1= − 0.1 A, I_B2= 0.1 A

MHz

µs

t_on

0.5

1.2

0.3

Storage time

t_stg

µs

Fall time

t_f

µs

Note) : Rank classification

Rank

h_FE1

40 to 90

70 to 150

120 to 250

12 3

中文翻译

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