Datasheet > 2SB1418P

2SB1418P

更新时间： 2024-11-21 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
3页	68K
描述
TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 60V V(BR)CEO \| 2A I(C) \| TO-221VAR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1418P 数据手册

Power Transistors

2SB1418, 2SB1418A

Silicon PNP epitaxial planar type Darlington

For power amplification

Unit: mm

Complementary to 2SD2138 and 2SD2138A

10.0 0.ꢀ

5.0 0.1

1.0 0.ꢀ

I Features

•

High forward current transfer ratio h_FE

High-speed switching

Allowing automatic insertion with radial taping

1.ꢀ 0.1

C 1.0

1.48 0.ꢀ

ꢀ.ꢀ5 0.ꢀ

0.65 0.1

0.35 0.1

0.65 ^0.1

I Absolute Maximum Ratings T_C= 25°C

1.05 0.1

0.55 ^0.1

0.55 0.1

Parameter

Symbol

Rating

−60

Unit

ꢀ.5 0.ꢀ

2SB1418

2SB1418A

2SB1418

2SB1418A

V_CBO

Collector to base

voltage

−80

ꢀ 3

1 : Base

2 : Collector

3 : Emitter

V_CEO

−60

Collector to

emitter voltage

−80

MT-4 (MT4 Type Package)

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

−5

−4

Internal Connection

−2

T_C= 25°C

T_a= 25°C

P_C

Collector power

dissipation

2.0

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

Conditions

I_CB= −60 V, I_B= 0

_CB= −80 V, I_B= 0

Min

Typ

Max

−100

Unit

2SB1418

2SB1418A

2SB1418

2SB1418A

I_CBO

µA

Collector cutoff

current

I_CEO

V_CE= −30 V, I_B= 0

V_CE= −40 V, I_B= 0

V_EB= −5 V, I_C= 0

I_C= −30 mA, I_B= 0

µA

Collector cutoff

current

Emitter cutoff current

I_EBO

µA

2SB1418

V_CEO

−60

−80

Collector to emitter

voltage

2SB1418A

Forward current transfer ratio

h_FE1

V_CE= −4 V, I_C= −1 A

1 000

2 000

h_FE2

V_CE= −4 V, I_C= −2 A

10 000

−2.8

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency

Turn-on time

V_BE

V_CE(sat)

f_T

V_CE= −4 V, I_C= −2 A

I_C= −2 A, I_B= −8 mA

−2.5

V_CE= −10 V, I_C= − 0.5 A, f = 1 MHz

I_C= −2 A, I_B1= −8 mA, I_B2= 8 mA,

V_CC= −50 V

0.2

MHz

µs

t_on

Turn-off time

t_off

µs

Note) : Rank classification

Rank

h_FE2

2 000 to 5 000 4 000 to 10 000

12 3

中文翻译

下载PDF

与2SB1418P相关器件

型号	品牌	获取价格	描述	数据表
2SB1418Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 60V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SB1418R	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 60V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SB1419	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB1419	ISC	获取价格	isc Silicon PNP Power Transistor
2SB1419P	ISC	获取价格	Transistor
2SB1419Q	ISC	获取价格	暂无描述
2SB1419S	ISC	获取价格	Transistor
2SB1420	SANKEN	获取价格	Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Pur
2SB1420_07	SANKEN	获取价格	Silicon PNP Epitaxial Planar Transistor
2SB1421	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 140V V(BR)CEO \| 12A I(C) \| TO-247VAR