Datasheet > 2SB1424

2SB1424

更新时间： 2024-11-23 12:53:39

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描述
Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics.

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2SB1424 数据手册

Product specification

2SB1424

Features

Low V^CE(sat). V^CE(sat)= -0.2V (Typ.) (I^C/I^B= -2A / -0.1A)

Excellent DC current gain characteristics.

PNP silicon transistor

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-20

-6

-3

-5

Collector current

I^CP*

P^C

Collector dissipation

Junction temperature

Storage temperature

0.5

T^j

150

T^stg

-55 to +150

* Single pulse Pw=10ms.

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CBO

Testconditons

Min

-20

-6

Typ

Max

Unit

Collector-base breakdown voltae

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

I^C= -50ìA

V^CEO

V^EBO

Ic^BO

I^EBO

h^FE

I^C= -1mA

I^E= -50ìA

V^CB= -20V

V^EB= -5V

-0.1

390

-0.5

Emitter cutoff current

DC current gain

V^CE=-2V, I^C= -0.1A

120

Collector-emitter saturation voltage

Output capacitance

V^CE(sat)I^C/I^B= -2A/ -0.1A

C^ob

f^T

VCB= -10V, IE=0A, f=1MHz

V^CE= -2V, I^E=0.5A, f=100MHz

Transition frequency

240

MHz

hFE Classification

Marking

Rank

AEQ

AER

hFE

120 270

180 390

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