Datasheet > 2SB1424

2SB1424

更新时间： 2024-11-23 06:24:07

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	52K
描述
Low VCE(sat) Transistor

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数据手册

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2SB1424 数据手册

SMD Type

Transistors

Low VCE(sat) Transistor

2SB1424

Features

Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A)

Excellent DC current gain characteristics.

PNP silicon transistor

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-20

-6

-3

-5

Collector current

I^CP*

P^C

Collector dissipation

Junction temperature

Storage temperature

0.5

T^j

150

Tstg

-55 to +150

* Single pulse Pw=10ms.

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CBO

Testconditons

Min

-20

-6

Typ

Max

Unit

Collector-base breakdown voltae

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

IC= -50ìA

V^CEO

V^EBO

Ic^BO

I^EBO

h^FE

IC= -1mA

IE= -50ìA

VCB= -20V

VEB= -5V

-0.1

390

-0.5

Emitter cutoff current

DC current gain

VCE=-2V, IC= -0.1A

120

Collector-emitter saturation voltage

Output capacitance

V^CE(sat)IC/IB= -2A/ -0.1A

C^ob

f^T

VCB= -10V, IE=0A, f=1MHz

VCE= -2V, IE=0.5A, f=100MHz

Transition frequency

240

MHz

hFE Classification

Marking

Rank

AEQ

AER

hFE

120 270

180 390

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2SB1424_15	UTC	获取价格	TRANSISTOR
2SB1424G-X-AB3-R	UTC	获取价格	LOW VCE(SAT) TRANSISTOR
2SB1424L-R-AB3-R	UTC	获取价格	Transistor
2SB1424L-X-AB3-R	UTC	获取价格	LOW VCE(SAT) TRANSISTOR
2SB1424N	ROHM	获取价格	暂无描述
2SB1424P	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1424Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 3A I(C) \| SC-62