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2SB1424T100 PDF预览

2SB1424T100

更新时间: 2024-11-23 12:58:27
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管放大器
页数 文件大小 规格书
4页 72K
描述
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2SB1424T100 数据手册

 浏览型号2SB1424T100的Datasheet PDF文件第2页浏览型号2SB1424T100的Datasheet PDF文件第3页浏览型号2SB1424T100的Datasheet PDF文件第4页 
2SB1424 / 2SA1585S  
Transistors  
Low VCE(sat) Transistor (20V, 3A)  
2SB1424 / 2SA1585S  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Low VCE(sat).  
2SB1424  
2SA1585S  
VCE(sat) = 0.2V (Typ.)  
(IC/IB = 2A / 0.1A)  
2) Excellent DC current gain characteristics.  
4
0.2  
2 0.2  
+
0.2  
4.5  
0.1  
1.5 0.1  
1.6 0.1  
3) Complements the 2SD2150 / 2SC4115S.  
+
0.15  
0.45  
0.05  
(1) (2) (3)  
+
0.1  
0.4  
0.05  
0.5 0.1  
3.0 0.2  
0.4 0.1  
1.5 0.1  
0.4 0.1  
1.5 0.1  
+
0.15  
+
0.4  
zStructure  
Epitaxial planar type  
PNP silicon transistor  
0.45  
2.5  
0.5  
0.05  
0.1  
5
(1) Base  
(2) Collector  
(3) Emitter  
(1) (2) (3)  
ROHM : MPT3  
EIAJ : SC-62  
(1) Emitter  
ROHM : SPT  
EIAJ : SC-72  
(2) Collector  
(3) Base  
Abbreviated symbol: AE  
Denotes hFE  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
20  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
VCBO  
VCEO  
VEBO  
20  
V
6  
V
2SB1424  
3  
A
I
C
Collector current  
2SA1585S  
2  
I
CP  
5  
A(Pulse)  
0.5  
2SB1424  
Collector power  
dissipation  
P
C
W
2SA1585S  
0.4  
Junction temperature  
Storage temperature  
Single pulse Pw=10ms  
Tj  
150  
°C  
°C  
Tstg  
55 to 150  
Rev.A  
1/3  

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