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2SB1424U PDF预览

2SB1424U

更新时间: 2024-11-24 14:55:43
品牌 Logo 应用领域
先科 - SWST 晶体管
页数 文件大小 规格书
5页 238K
描述
小信号晶体管

2SB1424U 数据手册

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2SB1424U  
PNP Silicon Epitaxial Planar Transistor  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Collector Base Voltage  
Symbol  
-VCBO  
-VCEO  
-VEBO  
Value  
20  
Unit  
V
Collector Emitter Voltage  
Emitter Base Voltage  
20  
V
6
V
Collector Current - DC  
-IC  
-ICP  
3
5
A
A
Collector Current - Pulse 1)  
Ptot  
Tj  
0.5  
150  
W
Total Power Dissipation  
Junction Temperature  
Storage Temperature Range  
Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Max.  
250  
Unit  
Thermal Resistance from Junction to Ambient 2)  
/W  
1) Single pulse, PW = 10 ms.  
2) Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.  
®
1 / 5  
Dated: 19/09/2022 Rev: 03  

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