Datasheet > 2SB1424-Q

2SB1424-Q

更新时间： 2024-11-24 01:14:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1197K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1424-Q 数据手册

SMD Type

Transistors

PNP Transistors

2SB1424

1.70 0.1

■ Features

● Excellent DC current gain

● Low collector-emitter saturation voltage

● Complementary to 2SD2150

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-20

Collector - Emitter Voltage

Emitter - Base Voltage

-6

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

-3

500

℃/W

RθJA

250

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

-20

-6

Ic= -100 uA， I

Ic= -1 mA, I =0

= -100 uA， I

^CB= -20V , I =0

EB= -5V , I =0

E=0

C=0

CBO

EBO

-0.1

-0.5

-1.2

390

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-2 A, I

=-100 mA

=-2 A, I

hFE

^CE= -2V, I

CB= -10V, I

CE= -2V, I = -500 mA,f=100MHz

C= -100 mA

120

Collector output capacitance

Transition frequency

E= 0,f=1MHz

240

MHz

■ Classification of hfe

Type

Range

Marking

2SB1424-Q

120-270

AEQ

2SB1424-R

180-390

AER

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