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2SB1418Q PDF预览

2SB1418Q

更新时间: 2024-11-21 23:20:07
品牌 Logo 应用领域
其他 - ETC 晶体晶体管放大器
页数 文件大小 规格书
3页 68K
描述
TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 2A I(C) | TO-221VAR

2SB1418Q 数据手册

 浏览型号2SB1418Q的Datasheet PDF文件第2页浏览型号2SB1418Q的Datasheet PDF文件第3页 
Power Transistors  
2SB1418, 2SB1418A  
Silicon PNP epitaxial planar type Darlington  
For power amplification  
Unit: mm  
Complementary to 2SD2138 and 2SD2138A  
10.0 0.ꢀ  
5.0 0.1  
1.0 0.ꢀ  
I Features  
High forward current transfer ratio hFE  
High-speed switching  
Allowing automatic insertion with radial taping  
1.ꢀ 0.1  
C 1.0  
1.48 0.ꢀ  
ꢀ.ꢀ5 0.ꢀ  
0.65 0.1  
0.35 0.1  
0.65 0.1  
I Absolute Maximum Ratings TC = 25°C  
1.05 0.1  
0.55 0.1  
0.55 0.1  
Parameter  
Symbol  
Rating  
60  
Unit  
ꢀ.5 0.ꢀ  
ꢀ.5 0.ꢀ  
2SB1418  
2SB1418A  
2SB1418  
2SB1418A  
VCBO  
V
Collector to base  
voltage  
80  
1
ꢀ 3  
1 : Base  
2 : Collector  
3 : Emitter  
VCEO  
60  
V
Collector to  
emitter voltage  
80  
MT-4 (MT4 Type Package)  
Emitter to base voltage  
Peak collector current  
Collector current  
VEBO  
ICP  
IC  
5  
V
A
4  
Internal Connection  
2  
A
C
E
TC = 25°C  
Ta = 25°C  
PC  
15  
W
Collector power  
dissipation  
B
2.0  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
I Electrical Characteristics TC = 25°C  
Parameter  
Symbol  
Conditions  
ICB = 60 V, IB = 0  
CB = 80 V, IB = 0  
Min  
Typ  
Max  
100  
100  
100  
100  
100  
Unit  
2SB1418  
2SB1418A  
2SB1418  
2SB1418A  
ICBO  
µA  
Collector cutoff  
current  
I
ICEO  
VCE = 30 V, IB = 0  
VCE = 40 V, IB = 0  
VEB = 5 V, IC = 0  
IC = 30 mA, IB = 0  
µA  
Collector cutoff  
current  
Emitter cutoff current  
IEBO  
µA  
2SB1418  
VCEO  
60  
80  
V
Collector to emitter  
voltage  
2SB1418A  
Forward current transfer ratio  
hFE1  
VCE = 4 V, IC = 1 A  
1 000  
2 000  
*
hFE2  
VCE = 4 V, IC = 2 A  
10 000  
2.8  
Base to emitter voltage  
Collector to emitter saturation voltage  
Transition frequency  
Turn-on time  
VBE  
VCE(sat)  
fT  
VCE = 4 V, IC = 2 A  
V
V
IC = 2 A, IB = 8 mA  
2.5  
VCE = 10 V, IC = 0.5 A, f = 1 MHz  
IC = 2 A, IB1 = 8 mA, IB2 = 8 mA,  
VCC = 50 V  
20  
0.2  
2
MHz  
µs  
ton  
Turn-off time  
toff  
µs  
Note) : Rank classification  
*
Rank  
Q
P
hFE2  
2 000 to 5 000 4 000 to 10 000  
1

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