Power Transistors
2SB1418, 2SB1418A
Silicon PNP epitaxial planar type Darlington
For power amplification
Unit: mm
Complementary to 2SD2138 and 2SD2138A
10.0 0.ꢀ
5.0 0.1
1.0 0.ꢀ
I Features
•
•
•
High forward current transfer ratio hFE
High-speed switching
Allowing automatic insertion with radial taping
1.ꢀ 0.1
C 1.0
1.48 0.ꢀ
ꢀ.ꢀ5 0.ꢀ
0.65 0.1
0.35 0.1
0.65 0.1
I Absolute Maximum Ratings TC = 25°C
1.05 0.1
0.55 0.1
0.55 0.1
Parameter
Symbol
Rating
−60
Unit
ꢀ.5 0.ꢀ
ꢀ.5 0.ꢀ
2SB1418
2SB1418A
2SB1418
2SB1418A
VCBO
V
Collector to base
voltage
−80
1
ꢀ 3
1 : Base
2 : Collector
3 : Emitter
VCEO
−60
V
Collector to
emitter voltage
−80
MT-4 (MT4 Type Package)
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
IC
−5
V
A
−4
Internal Connection
−2
A
C
E
TC = 25°C
Ta = 25°C
PC
15
W
Collector power
dissipation
B
2.0
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
ICB = −60 V, IB = 0
CB = −80 V, IB = 0
Min
Typ
Max
−100
−100
−100
−100
−100
Unit
2SB1418
2SB1418A
2SB1418
2SB1418A
ICBO
µA
Collector cutoff
current
I
ICEO
VCE = −30 V, IB = 0
VCE = −40 V, IB = 0
VEB = −5 V, IC = 0
IC = −30 mA, IB = 0
µA
Collector cutoff
current
Emitter cutoff current
IEBO
µA
2SB1418
VCEO
−60
−80
V
Collector to emitter
voltage
2SB1418A
Forward current transfer ratio
hFE1
VCE = −4 V, IC = −1 A
1 000
2 000
*
hFE2
VCE = −4 V, IC = −2 A
10 000
−2.8
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
VBE
VCE(sat)
fT
VCE = −4 V, IC = −2 A
V
V
IC = −2 A, IB = −8 mA
−2.5
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
IC = −2 A, IB1 = −8 mA, IB2 = 8 mA,
VCC = −50 V
20
0.2
2
MHz
µs
ton
Turn-off time
toff
µs
Note) : Rank classification
*
Rank
Q
P
hFE2
2 000 to 5 000 4 000 to 10 000
1