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2SB1424 PDF预览

2SB1424

更新时间: 2024-11-23 12:54:35
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 109K
描述
TRANSISTOR (PNP)

2SB1424 数据手册

  
RoHS  
2SB1424  
SOT-89  
1. BASE  
2SB1424 TRANSISTOR (PNP)  
FEATURES  
Power dissipation  
2. COLLECTOR  
3. EMITTER  
1
PCM:  
600  
mW (Tamb=25)  
2
3
Collector current  
ICM:  
-3  
A
Collector-base voltage  
V(BR)CBO  
:
-20  
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=-50µA, IE=0  
Ic=-1mA, IB=0  
MIN  
-20  
-20  
-6  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
IE=-50µA, IC=0  
µA  
µA  
VCB=-20V, IE=0  
-0.1  
-0.1  
390  
-0.5  
IEBO  
Emitter cut-off current  
VEB=-5V, IC=0  
hFE(1)  
DC current gain  
VCE=-2V, IC=-100mA  
120  
VCE(sat)  
V
Collector-emitter saturation voltage  
Transition frequency  
IC=-2A, IB=-100mA  
MHz  
pF  
fT  
VCE=-2V, IC=-500mA, f=100MHz  
240  
35  
Cob  
Collector output capacitance  
V
CB=-10V, IE=0, f=1MHz  
CLASSIFICATION OF hFE(1)  
Rank  
Q
R
Range  
120-270  
180-390  
WEJ ELECTRONIC CO.,LTD  
Marking  
AEQ  
AER  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 3A I(C) | SC-62