Datasheet > 2SB1417AP

2SB1417AP

更新时间： 2024-11-22 20:31:15

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2SB1417AP 数据手册

Power Transistors

2SB1417A

Silicon PNP epitaxial planar type

For power amplification

Unit: mm

Complementary to 2SD2137A

10.0 0.2

5.0 0.1

1.0 0.2

■ Features

• High forward current transfer ratio h_FEwhich has satisfactory

linearity

• Low collector-emitter saturation voltage V_CE(sat)

• Allowing automatic insertion with radial taping

1.2 0.1

C 1.0

1.48 0.2

2.25 0.2

0.65 0.1

0.35 0.1

0.65 ^0.1

■ Absolute Maximum Ratings T_a= 25°C

1.05 0.1

0.55 ^0.1

0.55 0.1

Parameter

Symbol

Rating

Unit

2.5 0.2

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

−80

2 3

−80

1: Base

2: Collector

3: Emitter

−6

Collector current

I_C

I_CP

P_C

−3

−5

MT-4-A1 Package

Peak collector current

T_C= 25°C

Collector power

dissipation

2.0

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 ∼ +150

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CEO

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

Base-emitter voltage

I_C= −30 mA, I_B= 0

−80

V_BE

V_CE= −4 V, I_C= −3 A

V_CE= −80 V, V_BE= 0

V_CE= −60 V, I_B= 0

V_EB= −6 V, I_C= 0

−1.8

−100

250

Collector-emitter cutoff current (E-B short) I_CES

µA



Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_CEO

I_EBO

h_FE1

h_FE2

V_CE= −4 V, I_C= −1 A

V_CE= −4 V, I_C= −3 A

Collector-emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)I_C= −3 A, I_B= − 0.375A

−1.2

MHz

µs

f_T

t_on

t_stg

t_f

V_CE= −5 V, I_C= − 0.2 A, f = 10 MHz

I_C= −1 A, I_B1= − 0.1 A, I_B2= 0.1 A

V_CC= −50 V

0.3

1.0

0.2

Storage time

µs

Fall time

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE1

70 to 150

120 to 250

Publication date: March 2003

SJD00072BED

12 3 4

中文翻译

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与2SB1417AP相关器件

型号	品牌	获取价格	描述	数据表
2SB1417AQ	PANASONIC	获取价格	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1417P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-221VAR
2SB1417Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-221VAR
2SB1418	PANASONIC	获取价格	Silicon PNP epitaxial planar type Darlington(For power amplification)
2SB1418/2SB1418A	ETC	获取价格	2SB1418. 2SB1418A - PNP Transistor Darlington
2SB1418A	PANASONIC	获取价格	Silicon PNP epitaxial planar type Darlington(For power amplification)
2SB1418AP	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SB1418AQ	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SB1418AR	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SB1418P	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 60V V(BR)CEO \| 2A I(C) \| TO-221VAR

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