Datasheet > 2SB1418/2SB1418A

2SB1418/2SB1418A

更新时间： 2024-11-21 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管达林顿晶体管
页数	文件大小	规格书
3页	68K
描述
2SB1418. 2SB1418A - PNP Transistor Darlington

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中文翻译

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数据手册

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2SB1418/2SB1418A 数据手册

Power Transistors

2SB1418, 2SB1418A

Silicon PNP epitaxial planar type Darlington

For power amplification

Unit: mm

Complementary to 2SD2138 and 2SD2138A

10.0 0.ꢀ

5.0 0.1

1.0 0.ꢀ

I Features

•

High forward current transfer ratio h_FE

High-speed switching

Allowing automatic insertion with radial taping

1.ꢀ 0.1

C 1.0

1.48 0.ꢀ

ꢀ.ꢀ5 0.ꢀ

0.65 0.1

0.35 0.1

0.65 ^0.1

I Absolute Maximum Ratings T_C= 25°C

1.05 0.1

0.55 ^0.1

0.55 0.1

Parameter

Symbol

Rating

−60

Unit

ꢀ.5 0.ꢀ

2SB1418

2SB1418A

2SB1418

2SB1418A

V_CBO

Collector to base

voltage

−80

ꢀ 3

1 : Base

2 : Collector

3 : Emitter

V_CEO

−60

Collector to

emitter voltage

−80

MT-4 (MT4 Type Package)

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

−5

−4

Internal Connection

−2

T_C= 25°C

T_a= 25°C

P_C

Collector power

dissipation

2.0

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

Conditions

I_CB= −60 V, I_B= 0

_CB= −80 V, I_B= 0

Min

Typ

Max

−100

Unit

2SB1418

2SB1418A

2SB1418

2SB1418A

I_CBO

µA

Collector cutoff

current

I_CEO

V_CE= −30 V, I_B= 0

V_CE= −40 V, I_B= 0

V_EB= −5 V, I_C= 0

I_C= −30 mA, I_B= 0

µA

Collector cutoff

current

Emitter cutoff current

I_EBO

µA

2SB1418

V_CEO

−60

−80

Collector to emitter

voltage

2SB1418A

Forward current transfer ratio

h_FE1

V_CE= −4 V, I_C= −1 A

1 000

2 000

h_FE2

V_CE= −4 V, I_C= −2 A

10 000

−2.8

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency

Turn-on time

V_BE

V_CE(sat)

f_T

V_CE= −4 V, I_C= −2 A

I_C= −2 A, I_B= −8 mA

−2.5

V_CE= −10 V, I_C= − 0.5 A, f = 1 MHz

I_C= −2 A, I_B1= −8 mA, I_B2= 8 mA,

V_CC= −50 V

0.2

MHz

µs

t_on

Turn-off time

t_off

µs

Note) : Rank classification

Rank

h_FE2

2 000 to 5 000 4 000 to 10 000

12 3

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与2SB1418/2SB1418A相关器件

型号	品牌	获取价格	描述	数据表
2SB1418A	PANASONIC	获取价格	Silicon PNP epitaxial planar type Darlington(For power amplification)
2SB1418AP	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SB1418AQ	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SB1418AR	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SB1418P	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 60V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SB1418Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 60V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SB1418R	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 60V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SB1419	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB1419	ISC	获取价格	isc Silicon PNP Power Transistor
2SB1419P	ISC	获取价格	Transistor