是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.84 |
Is Samacsys: | N | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 10 | JESD-30 代码: | R-PSIP-T3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 2 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | TIN SILVER BISMUTH COPPER |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 30 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1417AP | PANASONIC |
获取价格 |
暂无描述 | |
2SB1417AQ | PANASONIC |
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Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1417P | ETC |
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TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-221VAR | |
2SB1417Q | ETC |
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TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-221VAR | |
2SB1418 | PANASONIC |
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Silicon PNP epitaxial planar type Darlington(For power amplification) | |
2SB1418/2SB1418A | ETC |
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2SB1418. 2SB1418A - PNP Transistor Darlington | |
2SB1418A | PANASONIC |
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Silicon PNP epitaxial planar type Darlington(For power amplification) | |
2SB1418AP | ETC |
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TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 2A I(C) | TO-221VAR | |
2SB1418AQ | ETC |
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TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 2A I(C) | TO-221VAR | |
2SB1418AR | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 2A I(C) | TO-221VAR |