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2SB1417A PDF预览

2SB1417A

更新时间: 2024-11-21 22:52:39
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管功率双极晶体管ISM频段放大器
页数 文件大小 规格书
3页 57K
描述
Silicon PNP epitaxial planar type(For power amplification)

2SB1417A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):3 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):10JESD-30 代码:R-PSIP-T3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:TIN SILVER BISMUTH COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
Base Number Matches:1

2SB1417A 数据手册

 浏览型号2SB1417A的Datasheet PDF文件第2页浏览型号2SB1417A的Datasheet PDF文件第3页 
Power Transistors  
2SB1417, 2SB1417A  
Silicon PNP epitaxial planar type  
For power amplification  
Complementary to 2SD2137 and 2SD2137A  
Unit: mm  
Features  
High forward current transfer ratio hFE which has satisfactory linearity  
5.0±0.1  
Low collector to emitter saturation voltage VCE(sat)  
10.0±0.2  
1.0  
Allowing automatic insertion with radial taping  
90°  
Absolute Maximum Ratings (T =25˚C)  
C
Parameter  
Symbol  
Ratings  
Unit  
1.2±0.1  
C1.0  
Collector to  
2SB1417  
2SB1417A  
2SB1417  
–60  
2.25±0.2  
VCBO  
V
0.65±0.1  
1.05±0.1  
base voltage  
Collector to  
–80  
0.35±0.1  
–60  
0.55±0.1  
VCEO  
V
0.55±0.1  
emitter voltage 2SB1417A  
Emitter to base voltage  
Peak collector current  
Collector current  
–80  
VEBO  
ICP  
–6  
V
A
A
C1.0  
1
2 3  
–5  
IC  
–3  
15  
2.5±0.2  
2.5±0.2  
1:Base  
2:Collector  
3:Emitter  
Collector power TC=25°C  
PC  
W
dissipation  
Ta=25°C  
2.0  
MT4 Type Package  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Collector cutoff  
Symbol  
ICES  
Conditions  
min  
typ  
max  
–100  
–100  
–100  
–100  
–100  
Unit  
2SB1417  
2SB1417A  
2SB1417  
2SB1417A  
VCE = –60V, VBE = 0  
µA  
current  
VCE = –80V, VBE = 0  
VCE = –30V, IB = 0  
VCE = –60V, IB = 0  
VEB = –6V, IC = 0  
Collector cutoff  
current  
ICEO  
IEBO  
VCEO  
µA  
µA  
V
Emitter cutoff current  
Collector to emitter 2SB1417  
voltage 2SB1417A  
–60  
–80  
70  
IC = –30mA, IB = 0  
*
hFE1  
VCE = –4V, IC = –1A  
250  
Forward current transfer ratio  
Base to emitter voltage  
hFE2  
VBE  
VCE = –4V, IC = –3A  
10  
VCE = –4V, IC = –3A  
–1.8  
–1.2  
V
V
Collector to emitter saturation voltage VCE(sat)  
IC = –3A, IB = – 0.375A  
VCE = –5V, IC = – 0.2A, f = 10MHz  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
30  
0.3  
1.0  
0.2  
MHz  
µs  
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A,  
VCC = –50V  
µs  
µs  
*hFE1 Rank classification  
Rank  
hFE1  
Q
P
70 to 150  
120 to 250  
Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification.  
1

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