Datasheet > 2SB1317S

2SB1317S

更新时间： 2024-10-13 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	68K
描述
TRANSISTOR \| BJT \| PNP \| 180V V(BR)CEO \| 15A I(C) \| TO-247VAR

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中文翻译

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数据手册

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2SB1317S 数据手册

Power Transistors

2SB1317

Silicon PNP triple diffusion planar type

Unit: mm

For high power amplification

Complementary to 2SD1975

20.0 0.ꢀ

ꢀ.0 0.ꢁ

(ꢁ.0)

φ ꢁ.ꢁ 0.2

I Features

•

Excellent current I_Ccharacteristics of forward current transfer ratio

_FEvs. collector

(1.ꢀ)

•

Wide area of safe operation (ASO)

High transition frequency f_T

Optimum for the output stage of a Hi-Fi audio amplifier

(1.ꢀ)

2.0 0.ꢁ

2.7 ^0.ꢁ

ꢁ.0 0.ꢁ

1.0 0.2

0.6 0.2

ꢀ.4ꢀ 0.ꢁ

I Absolute Maximum Ratings T_C= 25°C

10.9 0.ꢀ

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

−180

−5

Unit

1 : Base

2 : Collector

3 : Emitter

ꢁ

TOP-3L Package

−25

I_C

−15

T_C= 25°C

T_a= 25°C

P_C

150

Collector power

dissipation

3.5

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

I_CBO

Conditions

Min

Typ

Max

−50

Unit

µA

V_CB= −180 V, I_E= 0

I_EBO

V_EB= −3 V, I_C= 0

µA

Forward current transfer ratio

h_FE1

V_CE= −5 V, I_C= −20 mA

V_CE= −5 V, I_C= −1 A

h_FE2

200

h_FE3

V_BE

V_CE= −5 V, I_C= −8 A

Base to emitter voltage

V_CE= −5 V, I_C= −8 A

−1.8

−2.5

Collector to emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C= −10 A, I_B= −1 A

V_CE= −5 V, I_C= − 0.5 A, f = 1 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

450

Note) : Rank classification

Rank

h_FE2

60 to 120

80 to 160

100 to 200

12 3 4

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