Datasheet > 2SB1317S

2SB1317S

更新时间： 2024-11-19 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	68K
描述
TRANSISTOR \| BJT \| PNP \| 180V V(BR)CEO \| 15A I(C) \| TO-247VAR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1317S 数据手册

Power Transistors

2SB1317

Silicon PNP triple diffusion planar type

Unit: mm

For high power amplification

Complementary to 2SD1975

20.0 0.ꢀ

ꢀ.0 0.ꢁ

(ꢁ.0)

φ ꢁ.ꢁ 0.2

I Features

•

Excellent current I_Ccharacteristics of forward current transfer ratio

_FEvs. collector

(1.ꢀ)

•

Wide area of safe operation (ASO)

High transition frequency f_T

Optimum for the output stage of a Hi-Fi audio amplifier

(1.ꢀ)

2.0 0.ꢁ

2.7 ^0.ꢁ

ꢁ.0 0.ꢁ

1.0 0.2

0.6 0.2

ꢀ.4ꢀ 0.ꢁ

I Absolute Maximum Ratings T_C= 25°C

10.9 0.ꢀ

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

−180

−5

Unit

1 : Base

2 : Collector

3 : Emitter

ꢁ

TOP-3L Package

−25

I_C

−15

T_C= 25°C

T_a= 25°C

P_C

150

Collector power

dissipation

3.5

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

I_CBO

Conditions

Min

Typ

Max

−50

Unit

µA

V_CB= −180 V, I_E= 0

I_EBO

V_EB= −3 V, I_C= 0

µA

Forward current transfer ratio

h_FE1

V_CE= −5 V, I_C= −20 mA

V_CE= −5 V, I_C= −1 A

h_FE2

200

h_FE3

V_BE

V_CE= −5 V, I_C= −8 A

Base to emitter voltage

V_CE= −5 V, I_C= −8 A

−1.8

−2.5

Collector to emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C= −10 A, I_B= −1 A

V_CE= −5 V, I_C= − 0.5 A, f = 1 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

450

Note) : Rank classification

Rank

h_FE2

60 to 120

80 to 160

100 to 200

12 3 4

中文翻译

下载PDF

与2SB1317S相关器件

型号	品牌	获取价格	描述	数据表
2SB1318	NEC	获取价格	Darlington Transistor BUILT-IN DUMPER DIODE AT E-C
2SB1318-AZ	RENESAS	获取价格	3000mA, 100V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1318K	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 3A I(C) \| TO-251VAR
2SB1318-K	RENESAS	获取价格	Small Signal Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon
2SB1318-K-AZ	RENESAS	获取价格	3000mA, 100V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1318L	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 3A I(C) \| TO-251VAR
2SB1318-L	RENESAS	获取价格	3000mA, 100V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1318-L	NEC	获取价格	Small Signal Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1318-L-AZ	RENESAS	获取价格	3000mA, 100V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1318M	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 3A I(C) \| TO-251VAR