Datasheet > 2SB1188-X-AB3-R

2SB1188-X-AB3-R

更新时间： 2024-02-16 13:35:31

品牌	Logo	应用领域
TRSYS		晶体晶体管
页数	文件大小	规格书
1页	67K
描述
MEDIUM POWER LOW VOLTAGE TRANSISTOR

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中文翻译

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数据手册

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2SB1188-X-AB3-R 数据手册

Transys

Electronics

I M I T E D

SOT-89 Plastic-Encapsulated Transistors

2SB1188 TRANSISTOR (PNP)

SOT-89

FEATURES

Power dissipation

P_CM

Collector current

I_CM:

1. BASE

0.5

-2

W (Tamb=25℃)

2. COLLECTOR

3. EMITTER

Collector-base voltage

V_(BR)CBO-40

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

MIN

-40

-32

-5

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic=-50µA , I_E=0

I_C= -1mA , I_B=0

I_E=-50µA, I_C=0

V_CB=-20 V , I_E=0

V_EB=-4 V , I_C=0

-1

µA

Emitter cut-off current

I_EBO

h_FE

V_Ce(sat)

f_T

DC current gain *

_CE=-3V, I_C= -0.5A

390

-0.8

Collector-emitter saturation voltage *

Transition frequency

I_C=-2A, I_B= -0.2A

V_CE=-5V,

MHz

I_C=-0.5A ,f=30MHz

Output capacitance

V_CB=-10V, I_E=0 ,f=1MHz

C_ob

* Measured using pulse current.

CLASSIFICATION OF h_FE

Rank

Range

82-180

120-270

180-390

Marking

BCP

BCQ

BCR

中文翻译

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