Datasheet > 2SB1189_10

2SB1189_10

更新时间： 2022-09-16 17:50:30

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	135K
描述
Medium power transistor(-80V, -0.7A)

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2SB1189_10 数据手册

Medium power transistor(80V, 0.7A)

2SB1189 / 2SB1238

Features

Dimensions (Unit : mm)

1) High breakdown voltage, BVCEO=80V, and

high current, I^C=0.7A.

2) Complements the 2SD1767 / 2SD1859.

2SB1189

4.0

1.0

2.5

0.5

( )

(

)

Absolute maximum ratings (Ta=25C)

(

)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

Unit

VCBO

VCEO

VEBO

−80

−5

−0.7

0.5

ROHM : MPT3

EIAJ : SC-62

(1) Base

(2) Collector

(3) Emitter

2SB1189

2SB1238

Collector power

dissipation

∗1

∗2

Junction temperature

Storage temperature

150

°C

Tstg

−55 to +150

∗1 When mounted on a 40×40×0.7 mm ceramic board.

∗2 Printed circuit board 1.7 mm thick, collector plating 1cm²or larger.

2SB1238

2.5

6.8

Packaging specifications and h^FE

Type

2SB1189

MPT3

2SB1238

ATV

0.65Max.

Package

hFE

0.5

Marking

Code

−

TV2

∗

(

)

( ) ( )

2 3

T100

1000

2.54 2.54

Basic ordering unit (pieces)

Denotes hFE

2500

1.05

0.45

∗

Taping specifications

ROHM : ATV

(1) Emitter

(2) Collector

(3) Base

Electrical characteristics (Ta=25C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

BV^CBO

BVCEO

BVEBO

Min.

−80

−5

−

Typ.

−

−0.2

−

100

Max.

Unit

Conditions

−

−0.5

−0.4

390

−

=−50μA

=−2mA

=−50μA

CB=−50V

EB=−4V

CBO

EBO

CE(sat)

μA

Emitter cutoff current

−

120

−

Collector-emitter saturation voltage

DC current transfer ratio

C/I

=−500mA/−50mA

=−3V/−0.1A

−

MHz

CE/I

Transition frequency

CE=−10V, I

CB=−10V, I

=50mA, f=100MHz

=0A, f=1MHz

Output capacitance

Cob

−

www.rohm.com

2010.07 - Rev.B

1/2

12 3

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