Datasheet > 2SB1190_15

2SB1190_15

更新时间： 2024-09-24 01:16:47

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	164K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB1190_15 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1190

DESCRIPTION

·With TO-220 package

·High V_CEO

·Large P_C

·Complement to type 2SD1772

APPLICATIONS

·Power amplifier

·TV vertical deflection output

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Fig.1 simplified outline (TO-220) and symbol

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

Open emitter

VALUE

UNIT

V_CBO

Collector-base voltage

-200

V_CEO

V_EBO

I_C

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

-150

-6

Open collector

-1

I_CM

Collector current-peak

-2

T_a=25℃

T_C=25℃

1.4

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3

中文翻译

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与2SB1190_15相关器件

型号	品牌	获取价格	描述	数据表
2SB1190_2014	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1190A	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 180V V(BR)CEO \| 1A I(C) \| TO-220AB
2SB1190AP	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 180V V(BR)CEO \| 1A I(C) \| TO-220AB
2SB1190AQ	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 180V V(BR)CEO \| 1A I(C) \| TO-220AB
2SB1190P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 1A I(C) \| TO-220AB
2SB1190Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 1A I(C) \| TO-220AB
2SB1191	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 1A I(C) \| TO-221VAR
2SB1191A	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 180V V(BR)CEO \| 1A I(C) \| TO-221VAR
2SB1191AH	PANASONIC	获取价格	Power Bipolar Transistor, 1A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1191AP	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 180V V(BR)CEO \| 1A I(C) \| TO-221VAR