SMD Type
Transistors
PNP Transistors
2SB1189
1.70 0.1
■ Features
● High breakdown voltage, BVCEO=-80V,
and High Current, I
C=-0.7A
● Complementary to 2SD1767
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
-80
-80
-5
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
I
C
-0.7
0.5
2
A
P
C
W
Collector Power Dissipation
Junction Temperature
T
J
150
℃
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
-80
-80
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= -100 μA, I
Ic= -2 mA, I =0
= -100μA, I
CB= -60V , I =0
EB= -4V , I =0
E=0
B
I
E
C=0
I
CBO
EBO
V
V
E
-0.5
-0.5
-0.4
-1.2
390
20
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=-500 mA, I
B
=-50mA
=-50mA
-0.2
V
C
=-500 mA, I
B
hFE
V
V
V
CE= -3V, I
CB= -10V, I
CE= -5V, I
C
= -100 mA
= 0,f=1MHz
= 50mA,f=100MHz
120
Collector output capacitance
Transition frequency
C
ob
T
E
14
pF
f
E
100
MHz
■ Classification of hfe
Type
Range
Marking
2SB1189-Q
120-270
BD Q*
2SB1189-R
180-390
BD R*
1
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