Datasheet > 2SB1189

2SB1189

更新时间： 2024-04-09 19:02:00

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	194K
描述
80V,0.7A,General Purpose PNP Bipolar Transistor

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2SB1189 数据手册

Product specification

Medium power transistor(-80V,-0.7A)

2SB1189

FEATURES

Lead-free



High breakdown voltage,BV_CEO=-80V,

And high current,I_C=-0.7A.

Complementary the 2SD1767.

SOT-89

ORDERING INFORMATION

Type No.

Marking

BDP/BDQ/BDR

Package Code

SOT-89

2SB1189□

□: none is for Lead Free package;

“G” is for Halogen Free package.

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-80

-5

-0.7

P_C

Collector power dissipation

500

℃

T_j,T_stg

Junction and Storage Temperature

-55 to +150

STM0235A

www.gmesemi.com

12 3 4

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2SB1189_10	ROHM	Medium power transistor(-80V, -0.7A)	获取价格
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2SB1189P	ROHM	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 700MA I(C) \| SC-62	获取价格
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2SB1189R	ROHM	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 700MA I(C) \| SC-62	获取价格