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2SB1179A PDF预览

2SB1179A

更新时间： 2024-11-17 21:55:19
品牌 Logo 应用领域
松下 - PANASONIC 晶体开关晶体管功率双极晶体管光电二极管
页数 文件大小 规格书
3页 76K
描述
For Power Amplification And Switching

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中文翻译

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2SB1179A 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.83
Is Samacsys：N最大集电极电流 (IC)：4 A
集电极-发射极最大电压：80 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：2000JESD-30 代码：R-PDSO-G3
JESD-609代码：e6湿度敏感等级：1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：1.3 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Bismuth (Sn/Bi)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：20 MHzBase Number Matches：1

2SB1179A 数据手册

 浏览型号2SB1179A的Datasheet PDF文件第2页浏览型号2SB1179A的Datasheet PDF文件第3页 
Power Transistors  
2SB1179, 2SB1179A  
Silicon PNP epitaxial planar type darlington  
Unit: mm  
For power amplification and switching  
Complementary to 2SD1749, 2SD1749A  
7.0 0.3  
3.5 0.2  
0˚ to 0.15˚  
3.0 0.2  
2.0 0.2  
■ Features  
• High forward current transfer ratio hFE which has satisfactory linearity  
• High-speed switching  
• I type package enabling direct soldering of the radiating fin to the  
printed circuit board, etc. of small electronic equipment  
1.1 0.1  
0.75 0.1 0.4 0.1  
■ Absolute Maximum Ratings TC = 25°C  
0.9 0.1  
0˚ to 0.15˚  
2.3 0.2  
Parameter  
Symbol  
Rating  
Unit  
4.6 0.4  
2
2SB1179  
2SB1179A  
2SB1179  
2SB1179A  
VCBO  
−60  
V
Collector-base voltage  
(Emitter open)  
1
3
−80  
VCEO  
−60  
V
Collector-emitter voltage  
(Base open)  
1: Base  
2: Collector  
3: Emitter  
I-G1 Package  
−80  
Emitter-base voltage (Collector open) VEBO  
−5  
V
A
Collector current  
IC  
ICP  
PC  
−4  
Note) Self-supported type package is also prepared.  
Peak collector current  
Collector power dissipation  
−8  
A
Internal Connection  
15  
W
C
Ta = 25°C  
1.3  
B
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
−55 to +150  
E
■ Electrical Characteristics TC = 25°C 3°C  
Parameter  
Symbol  
Conditions  
Min  
−60  
−80  
Typ  
Max  
Unit  
2SB1179  
2SB1179A  
VCEO  
IC = −30 mA, IB = 0  
V
Collector-emitter voltage  
(Base open)  
VBE  
ICBO  
VCE = −3 V, IC = −3 A  
VCB = −60 V, IE = 0  
VCB = −80 V, IE = 0  
VCE = −40 V, IB = 0  
VCE = −40 V, IB = 0  
VEB = −5 V, IC = 0  
−2.5  
−200  
−200  
−500  
−500  
−2  
V
Base-emitter voltage  
2SB1179  
2SB1179A  
2SB1179  
2SB1179A  
µA  
Collector-base cutoff  
current (Emitter open)  
ICEO  
µA  
Collector-emitter cutoff  
current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
IEBO  
hFE1  
mA  
VCE = −3 V, IC = − 0.5 A  
VCE = −3 V, IC = −3 A  
1000  
2000  
*
hFE2  
10 000  
−2  
Collector-emitter saturation voltage  
VCE(sat) IC = −3 A, IB = −12 mA  
IC = −5 A, IB = −20 mA  
V
−4  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
VCE = −10 V, IC = − 0.5 A, f = 1 MHz  
20  
0.3  
2.0  
0.5  
MHz  
µs  
IC = −3 A, IB1 = −12 mA, IB2 = 12 mA  
VCC = −50 V  
µs  
µs  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Q
P
hFE2  
2000 to 5000 4000 to 10000  
Publication date: February 2003  
SJD00055AED  
1
123

中文翻译

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与2SB1179A相关器件

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2SB1179AH PANASONIC

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 		Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1179AP PANASONIC

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 		Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1179AQ PANASONIC

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 		Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1179AR ETC

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 		TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-221VAR
2SB1179ATX PANASONIC

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 		Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1179H PANASONIC

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 		Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1179P PANASONIC

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 		Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1179Q PANASONIC

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 		Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1179R ETC

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 		TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 4A I(C) | TO-221VAR
2SB1179TX PANASONIC

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 		Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3

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