Datasheet > 2SB1181

2SB1181

更新时间： 2024-11-21 06:22:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	40K
描述
Power Transistor

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中文翻译

获取价格

数据手册

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2SB1181 数据手册

SMD Type

Transistors

Power Transistor

2SB1181

TO-252

Unit: mm

6.50^+0.15

2.30^+0.1

Features

-0.15

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Hight breakdown voltage and high current.

Low VCE(sat).

0.127

0.80^+0.1

max

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-80

-5

Collector current

-1

Collector current pulse

Collector power dissipation

I^CP

-2

P^C

Collector power dissipation (T^c=25

Junction temperature

)

150

Storage temperature

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-80

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBOIC=-50ìA

BV^CEOIC=-1mA

BV^EBOIE=-50ìA

I^CBO

I^EBO

V^CE(sat)IC= -500mA, IB= -50mA

h^FEVCE= -3V, IC= -0.1A

f^T

VCB=-60V

-1

ìA

Emitter cutoff current

VEB=-4V

Collector-emitter saturation voltage

DC current transfer ratio

-0.4

390

Transition frequency

VCE= -10V, IE=50mA, f=100MHz

VCB= -10V,IE=0A,f=1MHz

100

MHz

Output capacitance

C^ob

hFE Classification

Rank

hFE

82 180

120 270

180 390

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