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2SB1181_15 PDF预览

2SB1181_15

更新时间: 2024-11-19 01:14:47
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描述
PNP Transistors

2SB1181_15 数据手册

 浏览型号2SB1181_15的Datasheet PDF文件第2页 
SMD Type  
Transistors  
PNP Transistors  
2SB1181  
TO-252  
Unit: mm  
+0.15  
-0.15  
6.50  
+0.1  
-0.1  
Features  
2.30  
+0.8  
-0.7  
+0.2  
5.30  
-0.2  
0.50  
Hight breakdown voltage and high current.  
Low collector-emitter saturation voltage VCE(sat)  
Good hFE linearty.  
0.127  
max  
Complementary to 2SD1733  
+0.1  
-0.1  
0.80  
0.1  
0.1  
0.60+-  
1 Base  
2.3  
4.60  
+0.15  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
-80  
-80  
-5  
V
Collector Current - Continuous  
Collector current -Pulse  
I
C
-1  
A
I
CP  
-2  
Collector Power Dissipation  
Tc=25°C  
10  
1
P
C
W
Ta = 25℃  
Junction Temperature  
T
J
150  
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
-80  
-80  
-5  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= -100 μAI  
Ic= -1 mA, I =0  
= -100μAI  
CB= -60V , I =0  
EB= -4V , I =0  
E=0  
B
I
E
C=0  
I
CBO  
EBO  
V
V
E
-1  
uA  
V
I
C
-1  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
DC current gain  
V
CE(sat)  
BE(sat)  
I
I
C
=-500 mA, I  
B
=-50mA  
=-50mA  
-0.4  
-1.2  
390  
V
C
=-500 mA, I  
B
hFE  
V
V
V
CE= -3V, I  
C= -100 mA  
120  
Collector output capacitance  
Transition frequency  
C
ob  
T
CB= -10V, I  
CE= -10V, I  
E
= 0,f=1MHz  
= 50mA,f=100MHz  
25  
pF  
f
E
100  
MHz  
Classification of hfe  
Type  
2SB1181-Q  
120-270  
2SB1181-R  
180-390  
Range  
1
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