Datasheet > 2SB1181-R

2SB1181-R

更新时间： 2024-01-12 09:37:50

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页数	文件大小	规格书
2页	1116K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1181-R 数据手册

SMD Type

Transistors

PNP Transistors

2SB1181

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

■ Features

2.30

+0.8

-0.7

+0.2

5.30

-0.2

0.50

● Hight breakdown voltage and high current.

● Low collector-emitter saturation voltage V^CE(sat)

● Good hFE linearty.

0.127

max

● Complementary to 2SD1733

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-80

-5

Collector Current - Continuous

Collector current -Pulse

-1

-2

Collector Power Dissipation

Tc=25°C

℃

Ta = 25℃

Junction Temperature

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-80

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA, I =0

= -100μA， I

^CB= -60V , I =0

EB= -4V , I =0

E=0

C=0

CBO

EBO

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-500 mA, I

=-50mA

-0.4

-1.2

390

=-500 mA, I

hFE

^CE= -3V, I

C= -100 mA

120

Collector output capacitance

Transition frequency

CB= -10V, I

CE= -10V, I

= 0,f=1MHz

= 50mA,f=100MHz

100

MHz

■ Classification of hfe

Type

2SB1181-Q

120-270

2SB1181-R

180-390

Range

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