是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.68 | Is Samacsys: | N |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 82 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e2 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
功耗环境最大值: | 10 W | 最大功率耗散 (Abs): | 10 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Copper (Sn/Cu) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
VCEsat-Max: | 0.4 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1181/PQ | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1181/Q | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1181/QR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1181_15 | KEXIN |
获取价格 |
PNP Transistors | |
2SB1181F5 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-252VAR | |
2SB1181F5/P | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1181F5/PQ | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1181F5/PR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1181F5/Q | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1181F5/QR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon |