2SB1180ATX

更新时间： 2024-11-18 12:59:27

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2SB1180ATX 数据手册

Power Transistors

2SB1180, 2SB1180A

Silicon PNP epitaxial planar type darlington

Unit: mm

For medium-speed voltage switching

7.0 0.3

3.5 0.2

0˚ to 0.15˚

Complementary to 2SD1750, 2SD1750A

3.0 0.2

2.0 0.2

■ Features

• High forward current transfer ratio h_FE

• I type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment

1.1 0.1

0.75 0.1 0.4 0.1

0.9 0.1

0˚ to 0.15˚

■ Absolute Maximum Ratings T_C= 25°C

2.3 0.2

Parameter

Symbol

Rating

−60

Unit

4.6 0.4

2SB1180

2SB1180A

2SB1180

2SB1180A

V_CBO

Collector-base voltage

(Emitter open)

−80

1: Base

2: Collector

3: Emitter

V_CEO

−60

Collector-emitter voltage

(Base open)

−80

I-G1 Package

Emitter-base voltage (Collector open) V_EBO

−7

Note) Self-supported type package is also prepared.

Collector current

I_C

I_CP

P_C

−8

Peak collector current

Collector power dissipation

−12

Internal Connection

T_a= 25°C

1.3

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

Conditions

Min

−60

−80

Typ

Max

Unit

2SB1180

2SB1180A

2SB1180

2SB1180A

V_CEO

I_C= −30 mA, I_B= 0

Collector-emitter voltage

(Base open)

I_CBO

V_CB= −60 V, I_E= 0

V_CB= −80 V, I_E= 0

V_EB= −7 V, I_C= 0

−100

−2

µA

Collector-base cutoff

current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_EBO

h_FE1

V_CE= −3 V, I_C= −4 A

V_CE= −3 V, I_C= −8 A

2000

500

10 000



h_FE2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)I_C= −4 A, I_B= −8 mA

V_BE(sat)I_C= −4 A, I_B= −8 mA

−1.5

−2

f_T

t_on

t_stg

t_f

V_CE= −3 V, I_C= −1 A, f = 1 MHz

0.5

2.0

1.0

MHz

µs

I_C= −4 A, I_B1= −8 mA, I_B2= 8 mA

V_CC= −50 V

Storage time

µs

Fall time

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE1

2000 to 5000 4000 to 10000

Publication date: March 2003

SJD00056AED

12 3 4

中文翻译

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与2SB1180ATX相关器件

型号	品牌	获取价格	描述	数据表
2SB1180H	PANASONIC	获取价格	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1180P	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 60V V(BR)CEO \| 8A I(C) \| TO-221VAR
2SB1180Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 60V V(BR)CEO \| 8A I(C) \| TO-221VAR
2SB1180R	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 60V V(BR)CEO \| 8A I(C) \| TO-221VAR
2SB1180TX	PANASONIC	获取价格	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1181	ROHM	获取价格	Power Transistor
2SB1181	KEXIN	获取价格	Power Transistor
2SB1181	TYSEMI	获取价格	Hight breakdown voltage and high current. Low VCE(sat).
2SB1181/P	ROHM	获取价格	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1181/PQ	ROHM	获取价格	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon,

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