Datasheet > 2SB1181

2SB1181

更新时间： 2024-09-27 12:32:43

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描述
Hight breakdown voltage and high current. Low VCE(sat).

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数据手册

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2SB1181 数据手册

Product specification

2SB1181

TO-252

Unit: mm

6.50^+0.15

2.30^+0.1

Features

-0.15

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Hight breakdown voltage and high current.

Low V^CE(sat).

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-80

-5

Collector current

-1

Collector current pulse

Collector power dissipation

I^CP

-2

P^C

Collector power dissipation (T^c=25

Junction temperature

)

150

Storage temperature

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-80

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBOI^C=-50ìA

BV^CEOI^C=-1mA

BV^EBOI^E=-50ìA

I^CBO

I^EBO

V^CE(sat)I^C= -500mA, I^B= -50mA

h^FEV^CE= -3V, I^C= -0.1A

f^T

V^CB=-60V

-1

ìA

Emitter cutoff current

V^EB=-4V

Collector-emitter saturation voltage

DC current transfer ratio

-0.4

390

Transition frequency

V^CE= -10V, I^E=50mA, f=100MHz

V^CB= -10V,I^E=0A,f=1MHz

100

MHz

Output capacitance

C^ob

hFE Classification

Rank

hFE

82 180

120 270

180 390

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