5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| 2SB1178R | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 2A I(C) | TO-221VAR |
|
| 2SB1179 | PANASONIC |
获取价格 |
For Power Amplification And Switching |
|
| 2SB1179A | PANASONIC |
获取价格 |
For Power Amplification And Switching |
|
| 2SB1179AH | PANASONIC |
获取价格 |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |
|
| 2SB1179AP | PANASONIC |
获取价格 |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |
|
| 2SB1179AQ | PANASONIC |
获取价格 |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |
|
| 2SB1179AR | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
|
| 2SB1179ATX | PANASONIC |
获取价格 |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |
|
| 2SB1179H | PANASONIC |
获取价格 |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |
|
| 2SB1179P | PANASONIC |
获取价格 |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
