Datasheet > 2SB1132R

2SB1132R

更新时间： 2024-01-12 09:42:21

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
3页	195K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SB1132R 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.57
Is Samacsys：	N	最大集电极电流 (IC)：	1 A
配置：	Single	最小直流电流增益 (hFE)：	180
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	1 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SB1132R 数据手册

UTC2SB1132

PNPEPITAXIAL SILICON TRANSISTOR

MEDIUM POWER TRANSISTOR

DESCRIPTION

The UTC 2SB1132 is a epitaxial planar type PNP silicon

transistor.

FEATURES

*Low VCE(sat).VCE(sat)= -0.2V(Typ)(Ic/IB= -500mA/-50mA)

SOT-89

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

PARAMETER

Collector-Base Voltage

SYMBOL

VCBO

VCEO

VEBO

LIMITS

UNIT

-40

-32

-5

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

-1

Collector Current (PULSE) (note 1)

Collector Power Dissipation

Collector Power Dissipation (note 2)

Junction Temperature

-2

0.5

°C

150

-55 ~ +150

Storage Temperature

TSTG

Note 1: Single pulse, Pw=100ms

Note 2: When mounted on a 40*40*0.7 mm ceramic board.

ELECTRICAL CHARACTERISTICS ^{(Ta=25°C, unless otherwise specified)}

PARAMETER

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

SYMBOL

BVCBO

BVCEO

BVEBO

ICBO

TEST CONDITIONS

MIN TYP MAX UNIT

Ic= -50μA

Ic= -1mA

IE= -50μA

-40

-32

-5

μA

VCB= -20V

VEB= -4V

-0.5

390

IEBO

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Transition Frequency

VCE(sat)

hFE

Cob

Ic= -500mA,IB= -50mA (note)

VCE= -3V,Ic= -0.1A (note)

VCE= -5V, IE= 50 mA,f=30MHz

VCB= -10V, IE= 0A,f=1MHz

-0.2

150

MHz

Output Capacitance

Note: Measured using pulse current.

CLASSIFICATION OF h_FE

RANK

RANGE

82-180

120-270

180-390

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R208-016,A

12 3

中文翻译

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