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2SB1132RGP PDF预览

2SB1132RGP

更新时间: 2024-11-13 13:04:11
品牌 Logo 应用领域
力勤 - CHENMKO 晶体晶体管
页数 文件大小 规格书
3页 284K
描述
Transistor,

2SB1132RGP 技术参数

是否Rohs认证:符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.61Is Samacsys:N
最大集电极电流 (IC):1 A配置:Single
最小直流电流增益 (hFE):180最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):2 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

2SB1132RGP 数据手册

 浏览型号2SB1132RGP的Datasheet PDF文件第2页浏览型号2SB1132RGP的Datasheet PDF文件第3页 
CHENMKO ENTERPRISE CO.,LTD  
2SB1132PT  
SURFACE MOUNT  
PNP Medium Power Transistor  
VOLTAGE 32 Volts CURRENT 1 Ampere  
APPLICATION  
* Telephony and proferssional communction equipment.  
* Other switching applications.  
FEATURE  
SC-62/SOT-89  
* Small flat package. ( SC-62/SOT-89 )  
* High current gain.  
* Suitable for high packing density.  
* Low colloector-emitter saturation.  
* High saturation current capability.  
4.6MAX.  
1.7MAX.  
1.6MAX.  
0.4+0.05  
MARKING  
* HFE(P):P32  
* HFE(Q):Q32  
* HFE(R):BAR  
+0.08  
0.45-0.05  
+0.08  
+0.08  
0.40-0.05  
0.40-0.05  
1.50+0.1  
1.50+0.1  
1
2
3
1 Base  
2 Collector ( Heat Sink )  
3 Emitter  
CIRCUIT  
1
B
2
C
3
E
Dimensions in millimeters  
SC-62/SOT-89  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL PARAMETER CONDITIONS  
VCBO  
MIN.  
MAX.  
-40  
UNIT  
V
collector-base voltage open emitter  
V
VCEO  
collector-emitter voltage  
open base  
-32  
-5  
VEBO  
IC  
emitter-base voltage  
collector current (DC)  
open collector  
V
-1  
A
0.5  
2
PC  
Collector power dissipation  
W
Note2  
Tstg  
Tj  
storage temperature  
junction temperature  
°C  
°C  
55  
+150  
150  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
2.  
When mounted on a 40X40X0.7 mm ceramic board.  
2004-03  

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