生命周期: | Active | 零件包装代码: | TO-252 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.58 |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 32 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 180 |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 150 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SB1132L-R-TN3-R | UTC |
功能相似 |
MEDIUM POWER TRANSISTOR | |
2SB1132-R-TN3-T | UTC |
功能相似 |
MEDIUM POWER TRANSISTOR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1132-R-TN3-T | UTC |
获取价格 |
MEDIUM POWER TRANSISTOR | |
2SB1132-R-TP | MCC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMP | |
2SB1132-R-TP-HF | MCC |
获取价格 |
Small Signal Bipolar Transistor, | |
2SB1132T100/PQ | ROHM |
获取价格 |
1A, 32V, PNP, Si, POWER TRANSISTOR | |
2SB1132T100/PR | ROHM |
获取价格 |
1A, 32V, PNP, Si, POWER TRANSISTOR | |
2SB1132T100/Q | ROHM |
获取价格 |
1000mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPT3, SC-62, 3 PIN | |
2SB1132T100/R | ROHM |
获取价格 |
1000mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPT3, SC-62, 3 PIN | |
2SB1132T100P | ROHM |
获取价格 |
Medium Power Transistor (-32V,ï -1A) | |
2SB1132T100PQ | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1132T100PR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, |