Datasheet > 2SB1132-X-TN3-T

2SB1132-X-TN3-T

更新时间： 2024-11-13 04:25:51

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友顺 - UTC		晶体晶体管
页数	文件大小	规格书
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描述
MEDIUM POWER TRANSISTOR

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中文翻译

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数据手册

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2SB1132-X-TN3-T 数据手册

Transys

Electronics

I M I T E D

SOT-89 Plastic-Encapsulated Transistors

SOT-89

2SB1132 TRANSISTOR (PNP)

1. ^BASE

FEATURES

Power dissipation

2. ^COLLECTOR

3. ^EMITTER

P_CM:

0.5

-1

W (Tamb=25℃)

Collector current

I_CM:

Collector-base voltage

V_(BR)CBO-40

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-50µA, I_E=0

Ic=-1mA, I_B=0

I_E=-50µA, I_C=0

V_CB=-20V, I_E=0

V_EB=-4V, I_C=0

MIN

-40

-32

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

µA

-0.5

390

-0.5

I_EBO

Emitter cut-off current

h_FE(1)

DC current gain

V_CE=-3V, I_C=-100mA

V_CE(sat)

Collector-emitter saturation voltage

Transition frequency

I_C=-500mA, I_B=-50mA

MHz

f_T

V_CE=-5V, I_C=-50mA, f=30MHz

150

C_ob

Collector output capacitance

_CB=-10V, I_E=0, f=1MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

82-180

120-270

BAQ

180-390

Marking

BAP

BAR

中文翻译

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