Datasheet > 2SB1134_2014

2SB1134_2014

更新时间： 2024-11-14 01:20:03

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	222K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB1134_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1134

DESCRIPTION

·With TO-220F package

·Complement to type 2SD1667

·Low collector saturation voltage

APPLICATIONS

·Relay drivers,high-speed inverters and other

general high-current switching applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

MAX

-60

-50

-6

UNIT

Open emitter

Open base

Open collector

-5

I_CM

Collector current-peak

-9

T_a=25℃

T_C=25℃

P_C

Collector dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3 4

中文翻译

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2SB1134S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 5A I(C) \| TO-220VAR
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