生命周期: | Transferred | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.56 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 12 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 30 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 30 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 10 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1136_15 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB1136_2014 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB1136Q | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220VAR | |
2SB1136R | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220VAR | |
2SB1136S | ETC |
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TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220VAR | |
2SB1140 | SANYO |
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20V/5A Switching Applications | |
2SB1140R | ETC |
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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 | |
2SB1140-R | MCC |
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PNP Plastic-Encapsulate Transistors | |
2SB1140-R-T | MCC |
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Transistor | |
2SB1140-R-TP | MCC |
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Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC P |