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2SB1140-R PDF预览

2SB1140-R

更新时间: 2024-02-22 16:37:43
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管开关局域网
页数 文件大小 规格书
2页 109K
描述
PNP Plastic-Encapsulate Transistors

2SB1140-R 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.72
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):60JESD-30 代码:R-PSSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

2SB1140-R 数据手册

 浏览型号2SB1140-R的Datasheet PDF文件第2页 
M C C  
2SB1140-R  
2SB1140-S  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
PNP  
Power dissipation: PCM = 0.5W(Tamb=25?)  
Collector current: ICM = -2A  
Plastic-Encapsulate  
Collector-base voltage: V(BR)CBO = -50V  
Operating and storage junction temperature range  
TJ, Tstg: -55? to + 150?  
Transistors  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
SOT-89  
A
Electrical Characteristics @ 25R Unless Otherwise Specified  
K
B
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
(IC=-1000IA, IB=0)  
Min  
Typ  
Max  
Unit  
VCEO  
-50  
---  
---  
V
Collector-Base Breakdown Voltage  
(IC=-10IA, IE=0)  
VCBO  
VEBO  
ICBO  
-50  
-5.0  
---  
---  
---  
---  
---  
---  
---  
V
E
C
Emitter-Base Voltage  
V
(IE=-10IA, IC=0)  
D
Collector Cut-off Current  
(VCB=-50V, IE=0)  
-1.0  
-1.0  
IA  
IA  
G
H
Emitter Cut-off Current  
(VEB=-5V, IC=0)  
J
IEBO  
---  
F
DC Current Gain  
hFE1  
120  
---  
340  
---  
(VCE=-2V, IC=-0.2A)  
DC Current Gain  
(VCE=-2V, IC=-1A)  
Collector-Emitter Saturation Voltage  
(IC=-1A, IB=-50mA)  
Base-Emitter Saturation Voltage  
(IC=-1A, IB=-50mA)  
hFE2  
VCE(sat)  
VBE(sat)  
fT  
60  
---  
---  
---  
---  
---  
---  
---  
80  
---  
---  
-0.3  
-1.2  
---  
---  
V
1.BASE  
1
2
3
2.COLLECTOR  
3.EMITTER  
V
Transition Frequency  
MHz  
PF  
(VCE=-10Vdc, IC=50mAdc, f=200MHz)  
Collector output capacitance  
(VCB=-10V, IE=0, f=1MHz)  
Cob  
80  
CLASSIFICATION OF hFE  
ꢈꢀꢇꢄꢁꢅꢀꢁꢅꢆ  
Rank  
R
S
ꢈꢀꢇꢆ  
ꢀꢁꢂꢃꢄꢅꢆ  
ꢇꢇꢆ  
ꢁꢋꢌꢄꢅꢆ  
ꢇꢉꢊꢆ  
ꢇꢀꢁꢆ  
ꢍꢎꢏꢐꢆ  
ꢍꢕꢔꢐꢆ  
ꢍꢎꢗꢒꢆ  
ꢍꢕꢐꢎꢆ  
ꢍꢕꢓꢘꢆ  
ꢍꢎꢎꢑꢆ  
ꢍꢕꢎꢐꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢗꢗꢆ  
ꢇꢉꢊꢆ  
ꢇꢀꢁꢆ  
ꢒꢍꢐꢓꢆ  
ꢎꢍꢔꢕꢆ  
ꢐꢍꢓꢎꢆ  
ꢕꢍꢑꢕꢆ  
ꢘꢍꢐꢒꢆ  
ꢐꢍꢕꢕꢆ  
ꢕꢍꢐꢐꢆ  
ꢕꢍꢐꢑꢆ  
ꢕꢍꢐꢑꢆ  
ꢎꢍꢒꢕꢆ  
Range  
120-240  
170-340  
ꢉꢆ  
ꢖꢆ  
ꢂꢆ  
ꢈꢆ  
ꢄꢆ  
ꢙꢆ  
ꢝꢆ  
ꢃꢆ  
ꢞꢆ  
ꢍꢎꢑꢎꢆ  
ꢍꢕꢏꢎꢆ  
ꢍꢎꢔꢗꢆ  
ꢍꢕꢐꢓꢆ  
ꢍꢎꢕꢕꢆ  
ꢚꢚꢚꢚꢚꢆ  
ꢒꢍꢔꢕꢆ  
ꢎꢍꢑꢕꢆ  
ꢒꢍ25  
ꢎꢍꢕꢕꢆ  
ꢘꢍꢗꢒꢆ  
ꢚꢚꢚꢚꢚꢆ  
Marking  
1L  
ꢌꢛꢜꢆ  
ꢍꢕꢎꢓꢆ  
ꢍꢕꢘꢎꢆ  
ꢍꢕꢎꢔꢆ  
ꢍꢕꢔꢐꢆ  
ꢕꢍꢒꢑꢆ  
ꢕꢍꢗꢐꢆ  
ꢕꢍꢒꢎꢆ  
ꢎꢍꢔꢕꢆ  
 ꢆ  
www.mccsemi.com  
1 of 2  
Revision: 5  
2009/12/08  

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