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2SB1132-R-TP PDF预览

2SB1132-R-TP

更新时间: 2024-02-09 03:51:22
品牌 Logo 应用领域
美微科 - MCC 晶体管
页数 文件大小 规格书
2页 215K
描述
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3

2SB1132-R-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.57
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:32 V配置:SINGLE
最小直流电流增益 (hFE):180JESD-30 代码:R-PSSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

2SB1132-R-TP 数据手册

 浏览型号2SB1132-R-TP的Datasheet PDF文件第2页 
M C C  
2SB1132-P  
2SB1132-Q  
2SB1132-R  
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TM  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
PNP  
·
·
Moisure Sensitivity Level 1  
Plastic-Encapsulate  
Transistors  
Power dissipation: PCM = 0.5W(Tamb=25?)  
Collector current: ICM = -1A  
Collector-base voltage: V(BR)CBO = -40V  
Operating and storage junction temperature range  
TJ, Tstg: -55? to + 150?  
·
Halogen free available upon request by adding suffix "-HF"  
Electrical Characteristics @ 25R Unless Otherwise Specified  
SOT-89  
A
Symbol  
Parameter  
Collector-Emitter Voltage  
(IC=-50IA, IE=0)  
Min  
Typ  
Max  
Unit  
K
B
VCEO  
-32  
---  
---  
V
Collector-Base Voltage  
(IC=-1IA, IB=0)  
VCBO  
-40  
---  
---  
V
V
E
Emitter-Base Voltage  
(IE=-50IA, IC=0)  
VEBO  
ICBO  
IEBO  
hFE  
-5.0  
---  
---  
---  
---  
-0.5  
-0.5  
390  
-0.5  
---  
C
Collector cut-off Current  
(VCB=-20V, IE=0)  
IA  
IA  
---  
D
Emitter cut-off Current  
(VEB=-5V, IC=0)  
DC current gain  
(VCE=-2V, IC=-0.1A)  
Collector-Emitter Saturation Voltage  
(IC=-2A, IB=-0.1A)  
Transition Frequency  
(VCE=2.0Vdc, IC=0.5Adc)  
Collector output capacitance  
(VCB=-10V, IE=0, f=1MHz)  
---  
---  
G
H
J
F
82  
---  
---  
VCE(sat)  
fT  
---  
V
---  
150  
20  
MHz  
1.BASE  
1
2
3
Cob  
---  
30  
2.COLLECTOR  
3.EMITTER  
CLASSIFICATION OF hFE  
Rank  
Range  
Marking  
P
Q
R
82-180  
BAP  
120-270  
BAQ  
180-390  
BAR  
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Revision: B  
2013/01/01  

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