Datasheet > 2SB0767(2SB767)

2SB0767(2SB767)

更新时间： 2024-01-24 06:16:04

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
3页	66K
描述
小信号デバイス－小信号トランジスタ－汎用低周波増幅

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB0767(2SB767) 数据手册

Transistor

2SB0767 (2SB767)

Silicon PNP epitaxial planer type

For low-frequency output amplification

Complementary to 2SD0875 (2SD875)

Unit: mm

1.5 0.1

4.5 0.1

1.6 0.2

Features

Large collector power dissipation P_C.

High collector to emitter voltage V_CEO

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

45°

0.4 0.08

0.4 0.04

0.5 0.08

1.5 0.1

Absolute Maximum Ratings (Ta=25˚C)

3.0 0.15

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–80

marking

–80

–5

–1

– 0.5

1:Base

2:Collector

3:Emitter

EIAJ:SC–62

Mini Power Type Package

I_C

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

Marking symbol : C

T_j

150

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

V_CB= –20V, I_E= 0

_C= –10µA, I_E= 0

min

typ

max

Unit

µA

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

– 0.1

V_CBO

V_CEO

V_EBO

–80

–5

I_C= –100µA, I_B= 0

I_E= –10µA, I_C= 0

h_FE1

h_FE2

V_CE= –10V, I_C= –150mA^*2

V_CE= –5V, I_C= –500mA^*2

I_C= –300mA, I_B= –30mA^*2

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

330

Forward current transfer ratio

100

– 0.2

– 0.85

120

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

–0.4

–1.2

Transition frequency

f_T

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

Rank

FE1

h_FE1

Marking Symbol

90 ~ 155

130 ~ 220

185 ~ 330

Note.) The Part number in the Parenthesis shows

conventional part number.

12 3

中文翻译

下载PDF

与2SB0767(2SB767)相关器件

型号	品牌	获取价格	描述	数据表
2SB0767\|2SB767	ETC	获取价格	Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
2SB0767G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
2SB0767GQ	PANASONIC	获取价格	Transistor
2SB0767Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 500MA I(C) \| SC-62
2SB0767R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
2SB0767S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 500MA I(C) \| SC-62
2SB0774	PANASONIC	获取价格	Silicon PNP epitaxial planer type(For low-frequency amplification)
2SB0774(2SB774)	ETC	获取价格	小信号デバイス－小信号トランジスタ－汎用低周波増幅
2SB0774\|2SB774	ETC	获取价格	Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
2SB0774R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 100MA I(C) \| TO-92

产品中心

服务支持

精选活动

关于我们

帮助中心

2SB0767(2SB767)

2SB0767(2SB767) 数据手册

与2SB0767(2SB767)相关器件

与2SB0767(2SB767)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SB0767(2SB767)

2SB0767(2SB767) 数据手册

与2SB0767(2SB767)相关器件

与2SB0767(2SB767)相关文章

您还可以找

您在本页遇到什么问题？