Datasheet > 2SB0767GQ

2SB0767GQ

更新时间： 2024-01-24 10:28:38

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
4页	210K
描述
Transistor

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中文翻译

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技术参数
数据手册

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2SB0767GQ 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SB0767GQ 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SB0767G

Silicon PNP epitaxial planar type

For low-frequency output amplification

Complementary to 2SD0875G

■ Features

■ Package

•

• Large collector power dissipation P_C

Code

(Base open) V

• High

MiniP3-F2

Pin Name

1: Base

collector-emitter voltage

CEO

•

• Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing and the magazine packing

2: Collector

3: Emitter

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

Symbol

Rating

Unit

■ Marking Symbol: C

−80

−5

Collector current

I_C

I_CP

P_C

T_j

− 0.5

Peak collector current

Collector power dissipation ^*

Junction temperature

Storage temperature

−1

°C

150

T_stg

−55 to +150

Note) : Print circuit board: Copper foil area of 1 cm²or more, and the board

thickness of 1.7 mm for the collector portion.

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Conditions

I_C= −10 µA, I_E= 0

Min

−80

−5

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Forward current transfer ratio ^*1

I_C= −100 µA, I_B= 0

I_E= −10 µA, I_C= 0

V_CB= −20 V, I_E= 0

− 0.1

µA



h_FE1

V_CE= −10 V, I_C= −150 mA

V_CE= −5 V, I_C= −500 mA

220

h_FE2

100

Collector-emitter saturation voltage ^*1

Base-emitter saturation voltage ^*1

Transition frequency

V_CE(sat)I_C= −300 mA, I_B= −30 mA

V_BE(sat)I_C= −300 mA, I_B= −30 mA

− 0.2 − 0.4

− 0.85 −1.20

120

f_T

V_CB= −10 V, I_E= 50 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Pulse measurement

2: Rank classification

Rank

h_FE1

90 to 155

130 to 220

Publication date: October 2007

SJD00329AED

12 3 4

中文翻译

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与2SB0767GQ相关器件

型号	品牌	获取价格	描述	数据表
2SB0767Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 500MA I(C) \| SC-62
2SB0767R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
2SB0767S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 500MA I(C) \| SC-62
2SB0774	PANASONIC	获取价格	Silicon PNP epitaxial planer type(For low-frequency amplification)
2SB0774(2SB774)	ETC	获取价格	小信号デバイス－小信号トランジスタ－汎用低周波増幅
2SB0774\|2SB774	ETC	获取价格	Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
2SB0774R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 100MA I(C) \| TO-92
2SB0774S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 100MA I(C) \| TO-92
2SB0779	PANASONIC	获取价格	For low-frequency output amplification
2SB0779(2SB779)	ETC	获取价格	小信号デバイス－小信号トランジスタ－汎用低周波増幅

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