Datasheet > 2SA812

2SA812

更新时间： 2024-09-16 03:56:27

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		晶体晶体管
页数	文件大小	规格书
4页	253K
描述
Silicon Epitaxial Planar Transistor

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2SA812 数据手册

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

2SA812

FEATURES

Lead-free

Commplementary to 2SC1623.

High DC current gain:h_FE=200typ.

(V_CE=-6.0V,I_C=-1.0mA)

High Voltage: V_CEO=-50V

APPLICATIONS

Audio frequency, general purpose amplifier

SOT-23

ORDERING INFORMATION

Type No.

2SA812

Marking

M4/M5/M6/M7

Package Code

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

-60

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

-50

-5

Collector Current -Continuous

Collector Dissipation

-100

200

℃

P_C

Junction and Storage Temperature

T_j,T_stg

-55~150

Document number: BL/SSSTC010

Rev.A

www.galaxycn.com

12 3 4

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与2SA812相关器件

型号	品牌	获取价格	描述	数据表
2SA812_0712	BL Galaxy Electrical	获取价格	Silicon Epitaxial Planar Transistor
2SA812_15	WINNERJOIN	获取价格	TRANSISTOR
2SA812A	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN
2SA812-A	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3
2SA812AM4	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL
2SA812A-M4	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3
2SA812AM4-AT	NEC	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346
2SA812AM4-T1B	NEC	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346
2SA812AM4-T2B	NEC	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346
2SA812AM5	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL