Datasheet > 2SA812-HF_15

2SA812-HF_15

更新时间： 2024-11-07 01:05:39

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科信 - KEXIN		/
页数	文件大小	规格书
2页	1039K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA812-HF_15 数据手册

SMD Type

Transistors

PNP Transistors

2SA812-HF

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA)

High Voltage: VCEO = -50 V

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

1.9

-0.1

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Symbol

VCBO

VCEO

VEBO

Rating

-60

Unit

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

power dissipation

-50

-5.0

-100

200

Junction temperature

Storage temperature range

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain *

Symbol

ICBO

Testconditions

Min

Typ

200

Max

-0.1

600

Unit

VCB = -60 V, IE = 0 A

IEBO

VEB = -5.0 V, IC = 0 A

VCE = -6.0 V, IC = -1.0 mA

hFE

Collector saturation voltage

Base to emitter voltage

Output capacitance

VCE(sat) IC = -100 mA, IB = -10 mA

-0.18 -0.3

VBE

Cob

VCE = 6.0 V, IC = -1.0 mA

-0.58 -0.62 -0.68

VCE = -10 V, IE = 0 A, f = 1.0 MHz

VCE = -6.0 V, IE = 10 mA

4.5

Transition frequency

180

MHz

* Pulsed: PW

350 u s, Duty Cycle

hFE Classification

Type

Range

Marking

2SA812-M4-HF 2SA812-M5-HF 2SA812-M6-HF 2SA812-M7-HF

90-180 135-270 200-400 300-600

M4 M5 M6 M7

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