Datasheet > 2SA812M4-AT

2SA812M4-AT

更新时间： 2024-11-07 07:53:19

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
4页	236K
描述
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346

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2SA812M4-AT 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	0.1 A	配置：	Single
最小直流电流增益 (hFE)：	90	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SA812M4-AT 数据手册

DATA SHEET

SILICON TRANSISTOR

2SA812

PNP SILICON EPITAXIAL TRANSISTOR

MINI MOLD

FEATURES

• Complementary to 2SC1623

<R>

PACKAGE DRAWING (Unit: mm)

• High DC Current Gain: h^FE= 200 TYP. (VCE = −6.0 V, IC = −1.0 mA)

• High Voltage: V^CEO= −50 V

2.8 ꢀ.2

+ꢀ.1

ꢀ.65

–ꢀ.15

1.5 TYP.

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Total Power Dissipation

Junction Temperature

VCBO

V^CEO

V^EBO

I^C

P^T

T^j

−60

−50

−5.0

−100

200

°C

150

Storage Temperature Range

T^stg

−55 to +150 °C

Marking

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

SYMBOL

ICBO

MIN.

TYP.

MAX.

−0.1

600

UNIT

TEST CONDITIONS

VCB = −60 V, IE = 0 A

μA

IEBO

VEB = −5.0 V, IC = 0 A

hFE

200

−0.18

−0.62

180

VCE = −6.0 V, IC = −1.0 mA^Note

IC = −100 mA, IB = −10 mA

VCE = 6.0 V, IC = −1.0 mA

VCE = −6.0 V, IE = 10 mA

VCB = −10 V, IE = 0 A, f = 1.0 MHz

Collector Saturation Voltage

Base to Emitter Voltage

Gain Bandwidth Product

Output Capacitance

VCE(sat)

VBE

−0.3

−0.68

−0.58

MHz

<R>

Cob

4.5

Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2%

h^FECLASSIFICATION

Marking

200 to 400

hFE

90 to 180

135 to 270

300 to 600

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D17119EJ4V0DS00 (4th edition)

Date Published November 2005 NS CP(K)

Printed in Japan

1984

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4

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与2SA812M4-AT相关器件

型号	品牌	获取价格	描述	数据表
2SA812-M4-HF	KEXIN	获取价格	PNP Transistors
2SA812M4-T1B	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN
2SA812M4-T1B-A	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN
2SA812M4-T2B-A	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN
2SA812M4-T2B-AT	RENESAS	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346
2SA812M4-TP	MCC	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
2SA812-M4-TP-HF	MCC	获取价格	暂无描述
2SA812M5	TRSYS	获取价格	Transistor
2SA812M5	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3
2SA812M5	RECTRON	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC

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