是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | MINIMOLD PACKAGE-3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.08 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 90 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 180 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA812AM4-AT | NEC |
获取价格 |
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346 | |
2SA812AM4-T1B | NEC |
获取价格 |
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346 | |
2SA812AM4-T2B | NEC |
获取价格 |
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346 | |
2SA812AM5 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL | |
2SA812AM5-AT | NEC |
获取价格 |
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346 | |
2SA812AM5-T1B-AT | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346 | |
2SA812AM7-AT | NEC |
获取价格 |
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346 | |
2SA812A-T2B-AT | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346 | |
2SA812-HF_15 | KEXIN |
获取价格 |
PNP Transistors | |
2SA812K | SECOS |
获取价格 |
PNP Epitaxial Planar Transistor |