Datasheet > 2SA812M4

2SA812M4

更新时间： 2024-09-16 20:28:31

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描述
Transistor

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中文翻译

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技术参数
数据手册

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2SA812M4 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Is Samacsys：	N	Base Number Matches：	1

2SA812M4 数据手册

Transys

Electronics

I M I T E D

SOT-23-3L Plastic-Encapsulated Transistors

SOT-23-3L

1. BASE

2SA812 TRANSISTOR (PNP)

2. EMITTER

3. COLLECTOR

FEATURES

Power dissipation

P_CM

0.2

W (Tamb=25℃)

2. 80¡ À0. 05

1. 60¡ À0. 05

Collector current

I_CM

-0.1

Collector-base voltage

V_(BR)CBO: -60

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

MIN

-60

-50

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic=-100µA, I_E=0

Ic= -1mA, I_B=0

I_E= -100µA, I_C=0

V_CB=- 60 V , I_E=0

V_EB= -5V , I_C=0

-0.1

600

µA

I_EBO

Emitter cut-off current

h_FE

V_CE=- 6V, I_C= -1mA

I_C=-100 mA, I_B= -10mA

I_C=-1mA, V_CE=-6V

DC current gain

V_CE(sat)

V_BE

-0.3

-0.68

Collector-emitter saturation voltage

Base-emitter voltage

V_CE=-6V, I_C= -10mA

180

MHz

Transition frequency

f_T

CLASSIFICATION OF h^FE

Marking

Range

135-270

200-400

90-180

300-600

中文翻译

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