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2SA2154-GR(TPL3)

更新时间： 2024-09-26 14:48:07
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 159K
描述
Bipolar Transistors 100mA -0.3V

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中文翻译

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2SA2154-GR(TPL3) 技术参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：unknown风险等级：5.61
Base Number Matches：1

2SA2154-GR(TPL3) 数据手册

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2SA2154  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
2SA2154  
General-Purpose Amplifier Applications  
Unit: mm  
• High voltage and high current  
: VCEO = −50 V, IC = −100 mA (max)  
• Excellent h linearity  
FE  
: h (I = −0.1 mA)/h (I = −2 mA) = 0.95 (typ.)  
FE  
C
FE  
C
• High h  
h = 120~400  
: FE  
FE  
1
• Complementary to 2SC6026  
3
2
0.8±0.05  
1.0±0.05  
0.1±0.05  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
−50  
−50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
0.1±0.05  
−5  
V
I
−100  
−30  
mA  
mA  
mW  
°C  
°C  
C
1.BASE  
Base current  
I
B
2.EMITTER  
3.COLLECTOR  
fSM  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
50  
C
T
j
150  
JEDEC  
JEITA  
―
―
T
stg  
−55~150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-1E1A  
Weight: 0.6 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Collector cutoff current  
Symbol  
Test Condition  
= −50 V, I = 0  
Min  
Typ.  
Max  
Unit  
I
V
⎯
⎯
−0.1  
μA  
CBO  
CB  
E
Emitter cutoff current  
I
V
V
= −5 V, I = 0  
⎯
120  
⎯
⎯
⎯
−0.1  
400  
−0.3  
⎯
μA  
⎯
EBO  
EB  
CE  
C
DC current gain  
h
(Note)  
= −6 V, I = −2 mA  
C
FE  
Collector-emitter saturation voltage  
Transition frequency  
V
I
= −100 mA, I = −10 mA  
−0.18  
⎯
V
CE (sat)  
C
B
f
V
V
= −10 V, I = −1 mA  
80  
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
= −10 V, I = 0, f = 1 MHz  
⎯
1.6  
⎯
ob  
E
Note: h classification Y (F): 120~240, GR (H): 200~400  
FE  
(
) marking symbol  
Marking  
Type Name  
Rank  
h
FE  
8F  
1
2007-11-01  
123

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