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2SA1315-O PDF预览

2SA1315-O

更新时间: 2024-11-08 20:03:03
品牌 Logo 应用领域
东芝 - TOSHIBA 开关晶体管
页数 文件大小 规格书
5页 199K
描述
TRANSISTOR 2000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN, BIP General Purpose Small Signal

2SA1315-O 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.87最大集电极电流 (IC):2 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):70JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.9 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
VCEsat-Max:0.5 VBase Number Matches:1

2SA1315-O 数据手册

 浏览型号2SA1315-O的Datasheet PDF文件第2页浏览型号2SA1315-O的Datasheet PDF文件第3页浏览型号2SA1315-O的Datasheet PDF文件第4页浏览型号2SA1315-O的Datasheet PDF文件第5页 
2SA1315  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
2SA1315  
Power Amplifier Applications  
Power Switching Applications  
Unit: mm  
Low collector saturation voltage: V  
= 0.5 V (max) (I = 1 A)  
CE (sat) C  
High-speed switching time: t  
Complementary to 2SC3328  
= 1.0 μs (typ.)  
stg  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
80  
80  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5  
V
I
2  
A
C
Base current  
I
1  
A
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
900  
mW  
°C  
°C  
C
JEDEC  
JEITA  
TO-92MOD  
T
150  
j
T
stg  
55 to 150  
TOSHIBA  
2-5J1A  
Note1: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 0.36 g (typ.)  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2009-12-21  

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