Datasheet > 2SA1315-Y(TPE6,F)

2SA1315-Y(TPE6,F)

更新时间： 2024-02-29 22:09:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	179K
描述
TRANSISTOR,BJT,PNP,80V V(BR)CEO,2A I(C),TO-92

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数据手册

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2SA1315-Y(TPE6,F) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	最大集电极电流 (IC)：	2 A
配置：	Single	最小直流电流增益 (hFE)：	120
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.9 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SA1315-Y(TPE6,F) 数据手册

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2SA1315

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1315

Power Amplifier Applications

Power Switching Applications

Unit: mm

•

Low collector saturation voltage: V

= −0.5 V (max) (I = −1 A)

CE (sat) C

High-speed switching time: t

Complementary to 2SC3328

= 1.0 μs (typ.)

stg

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−80

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

−2

Base current

−1

Collector power dissipation

Junction temperature

Storage temperature range

900

°C

JEDEC

JEITA

TO-92MOD

150

―

stg

−55 to 150

TOSHIBA

2-5J1A

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.36 g (typ.)

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-12-21

12 3 4 5

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