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2SA1319S-AA PDF预览

2SA1319S-AA

更新时间: 2023-01-02 20:59:12
品牌 Logo 应用领域
安森美 - ONSEMI /
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描述
2SA1319S-AA

2SA1319S-AA 数据手册

 浏览型号2SA1319S-AA的Datasheet PDF文件第2页浏览型号2SA1319S-AA的Datasheet PDF文件第3页浏览型号2SA1319S-AA的Datasheet PDF文件第4页 
Ordering number:ENN1334D  
PNP/NPN Epitaxial Planar Silicon Transistors  
2SA1319/2SC3332  
High-Voltage Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Hgih breakdown voltage.  
· Excellent h linearity.  
· Wide ASO and highly resistant to breakdown.  
· Adoption of MBIT process.  
FE  
2003B  
[2SA1319/2SC3332]  
5.0  
4.0  
4.0  
Switching Test Circuit  
I
B1  
PW=20µs  
D.C.1%  
OUTPUT  
R
0.45  
0.5  
B
INPUT  
0.44  
R
L
333Ω  
0.45  
I
B2  
V
R
50Ω  
+
+
100µF  
470µF  
1 : Emitter  
2 : Collector  
3 : Base  
1
2
3
--5V  
100V  
20I =--20I =I =300mA  
B1 B2  
C
SANYO : NP  
1.3  
1.3  
(For PNP, the polarity is reversed.)  
( ) : 2SA1319  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
Collector-to-Base Voltage  
V
(–)180  
(–)160  
(–)6  
V
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
CEO  
V
V
EBO  
I
(–)0.7  
A
C
Collector Current (Pulse)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
I
(–)1.5  
A
CP  
P
C
700  
mW  
˚C  
˚C  
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Collector Cutoff Current  
I
V
V
V
V
=(–)120V, I =0  
E
=(–)4V, I =0  
C
=(–)5V, I =(–)100mA  
C
=(–)5V, I =(–)10mA  
C
(–)0.1  
(–)0.1  
400*  
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
Emitter Cutoff Current  
DC Current Gain  
I
EBO  
h
h
1
100*  
80  
FE  
FE  
2
* : The 2SA1319/2SC3332 are classified by 100mA h as follows :  
Continued on next page.  
FE  
Rank  
R
S
T
h
100 to 200 140 to 280 200 to 400  
FE  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
83002TN (KT)/71598HA (KT)/3207KI/N257KI/3135KI/O183KI, TS No.1334-1/4  

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