Datasheet > 2SA1318

2SA1318

更新时间： 2024-01-06 15:39:29

品牌	Logo	应用领域
SECOS		晶体晶体管放大器
页数	文件大小	规格书
1页	79K
描述
PNP Plastic Encapsulated Transistor

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技术参数
数据手册

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2SA1318 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.71	Is Samacsys：	N
Base Number Matches：	1

2SA1318 数据手册

2SA1318

-0.2 A, -60 V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-92

FEATURES



Large Current Capacity and Wide ASO

APPLICATIONS

Emitter

Collector

Base



Capable of Being Used in The Low Frequency to High

Frequency Range

Millimeter

REF.

CLASSIFICATION OF h_FE(1)

Min.

4.40

4.30

12.70

3.30

0.36

Max.

4.70

3.81

0.56

0.51

Product-Rank 2SA1318-R 2SA1318-S 2SA1318-T 2SA1318-U

Range 100~200 140~280 200~400 280~560

1.27 TYP.

1.10

2.42

0.36

2.66

0.76

Collector





Base



Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

-60

Unit

Collector to Emitter Voltage

-50

Emitter to Base Voltage

-6

Collector Current - Continuous

Collector Power Dissipation

-0.2

500

250

P_C

Thermal Resistance From Junction to Ambient

Junction, Storage Temperature

R_θJA

°C / W

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Min

-60

Typ

Max

Unit

Test condition

I_C= -0.01mA, I_E=0

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

-50

I_C= -1mA, I_B=0

-6

I_E= -0.01mA, I_C=0

V_CB= -40V, I_E=0

-0.1

560

μA

Emitter Cut-Off Current

I_EBO

V_EB= -5V, I_C=0

h_FE(1)

100

V_CE= -6V, I_C= -1mA

V_CE= -6V, I_C= -0.1mA

I_C= -0.1A, I_B= -10mA

DC Current Gain

h_FE(2)

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Transition Frequency

V_CE(sat)

V_BE(sat)

f_T

-0.3

-1.0

200

4.5

MHz V_CE= -6V, I_C= -10mA

pF V_CB= -6V, f=1MHz

Collector Output Capacitance

C_ob

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

19-Jan-2011 Rev. A

Page 1 of 1

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与2SA1318相关器件

型号	品牌	获取价格	描述	数据表
2SA1318R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 200MA I(C) \| TO-92
2SA1318S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 200MA I(C) \| TO-92
2SA1318T	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 200MA I(C) \| TO-92
2SA1318U	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 200MA I(C) \| TO-92
2SA1319	SANYO	获取价格	High-Voltage Switching Applications
2SA1319R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 700MA I(C) \| TO-92
2SA1319S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 700MA I(C) \| TO-92
2SA1319S-AA	ONSEMI	获取价格	2SA1319S-AA
2SA1319T	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 700MA I(C) \| TO-92
2SA1319T-AA	ONSEMI	获取价格	2SA1319T-AA