Datasheet > 2PD601ARW

2PD601ARW

更新时间： 2024-10-14 06:23:59

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
2页	50K
描述
NPN General Purpose Transistor

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中文翻译

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数据手册

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2PD601ARW 数据手册

SMD Type

Transistors

NPN General Purpose Transistor

2PD601AW

Features

High collector current (max. 100 mA)

Low collector-emitter saturation voltage (max. 500 mV).

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-emitter voltage

Emitter-base voltage

Collector current

100

Peak collector current

I^CM

200

Total power dissipation

Storage temperature

P^tot

200

T^stg

-65 to +150

150

Junction temperature

Operating ambient temperature

Thermal resistance from junction to ambient

Tamb

Rth j-a

-65 to +150

625

K/W

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