Datasheet > 2PD601ASW

2PD601ASW

更新时间： 2024-10-31 17:00:39

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
3页	236K
描述
50V,0.1A,General Purpose NPN Bipolar Transistor

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2PD601ASW 数据手册

Product specification

NPN Silicon Epitaxial Planar Transistor

2PD601AW

FEATURES



Collector current.(I_C= 100mA）

Excellent h_FElinearity

Power dissipation.(P_C=200mW)

APPLICATIONS



General purpose application.

SOT-323

ORDERING INFORMATION

Type No.

Marking

Package Code

2PD601AW

6D/6E/6F

SOT-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

100

℃

P_C

200

Junction and Storage Temperature

T_j,T_stg

-55 to +150

STM0093A: December 2018 [P]

www.gmesemi.com

12 3

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2PD601ASW,115	NXP	获取价格	2PD601A series - NPN general purpose transistors; 50 V, 100 mA SC-70 3-Pin
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2PD601AW	TYSEMI	获取价格	High collector current (max. 100 mA) Low collector-emitter saturation voltage (max. 500 mV
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